Korean chipmaker Hynix Semiconductor has introduced a family of components and high capacity modules based on 60nm 1Gb DDR2 DRam.

The 1Gb and 2Gb Unregistered Dimm modules boast operating speeds of 800MHz, which Hynix claims to be the fastest in the industry.

As the 60nm process ramps up, manufacturing costs of the 1Gb DRam is expected to decline up to 50 per cent when compared to first generation 80nm technologies.

The resulting 1Gb package size will allow Hynix to cost-efficiently manufacture 4Gb and higher density Registered Dimm and Fully Buffered Dimm, the company said.

"Our 60nm process has been highly stable, even under worst case conditions," said Hong Sung Joo, vice president of product development at Hynix.

"Additionally the 3D transistor architecture and triple-metal layer process significantly improves speed-power characteristics of the components."

The 60nm process-based 1Gb 800MHz DDR2 DRam component and the 2Gb module will go into volume production as the market matures early in the first half of 2007.